FQB60N03L N-Channel Logic Level PWM Optimized
Power MOSFET General Description
This device employs a new advanced
MOSFET technology and features low gate charge while maintaining low onresistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Applications • DC/DC converters Features
• Fast switching
• rDS(ON) = 0.010Ω (Typ), VGS = 10V
• rDS(ON) = 0.017Ω (Typ), VGS = 5V
• Qg (Typ) = 13nC, VGS = 5V
• Qgd (Typ) = 4.5nC
• CISS (Typ) = 1650pF